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High-Frequency Modulated Secondary-Side Self-Powered Isolated Gate Driver for Full Range PWM Operation of SiC Power MOSFETs

dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorGurpinar, Emre
dc.contributor.authorCastellazzi, Alberto
dc.date.accessioned2017-05-16T08:20:07Z
dc.date.available2017-05-16T08:20:07Z
dc.date.issued2017
dc.identifier.urihttp://hdl.handle.net/10651/42666
dc.descriptionAEPEC 2017 (Tampa, Florida)spa
dc.description.sponsorshipThis work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).eng
dc.format.extent6 p.spa
dc.language.isoengspa
dc.relation.ispartof2017 IEEE Applied Power Electronics Conference and Exposition (APEC)spa
dc.rightsCC Reconocimiento - No comercial - Sin obras derivadas 4.0 Internacional
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleHigh-Frequency Modulated Secondary-Side Self-Powered Isolated Gate Driver for Full Range PWM Operation of SiC Power MOSFETseng
dc.typeconference outputspa
dc.relation.projectIDMECD/PRX15/00594spa
dc.relation.projectIDMEC/ENE2013-44245-R
dc.rights.accessRightsopen accessspa


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CC Reconocimiento - No comercial - Sin obras derivadas 4.0 Internacional
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